Germanium doping, contacts, and thin-body structures

R. Duffy; M. Shayesteh

doi:10.1149/1.3700468

Germanium doping, contacts, and thin-body structures

R. Duffy
, M. Shayesteh

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Interest in Ge has risen sharply since the turn of the century, as it has enabled applications ranging from field-effect-transistors, solar cells, photonics, and sensors. In this paper the state-of-the-art will be reviewed in the areas of (i) dopant behavior and ultrashallow junction performance metrics, (ii) thin-body structure formation, and (iii) contact methodologies in Ge.

Original language	English
Title of host publication	Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4
Publisher	Electrochemical Society Inc.
Pages	189-201
Number of pages	13
Edition	4
ISBN (Electronic)	9781607683148
ISBN (Print)	9781566779562
DOIs	https://doi.org/10.1149/1.3700468
Publication status	Published - 2012
Event	4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	4
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1149/1.3700468

Cite this

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title = "Germanium doping, contacts, and thin-body structures",

abstract = "Interest in Ge has risen sharply since the turn of the century, as it has enabled applications ranging from field-effect-transistors, solar cells, photonics, and sensors. In this paper the state-of-the-art will be reviewed in the areas of (i) dopant behavior and ultrashallow junction performance metrics, (ii) thin-body structure formation, and (iii) contact methodologies in Ge.",

author = "R. Duffy and M. Shayesteh",

year = "2012",

doi = "10.1149/1.3700468",

language = "English",

isbn = "9781566779562",

series = "ECS Transactions",

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address = "United States",

edition = "4",

note = "4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

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Duffy, R & Shayesteh, M 2012, Germanium doping, contacts, and thin-body structures. in Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4. 4 edn, ECS Transactions, no. 4, vol. 45, Electrochemical Society Inc., pp. 189-201, 4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/1.3700468

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AU - Shayesteh, M.

PY - 2012

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N2 - Interest in Ge has risen sharply since the turn of the century, as it has enabled applications ranging from field-effect-transistors, solar cells, photonics, and sensors. In this paper the state-of-the-art will be reviewed in the areas of (i) dopant behavior and ultrashallow junction performance metrics, (ii) thin-body structure formation, and (iii) contact methodologies in Ge.

AB - Interest in Ge has risen sharply since the turn of the century, as it has enabled applications ranging from field-effect-transistors, solar cells, photonics, and sensors. In this paper the state-of-the-art will be reviewed in the areas of (i) dopant behavior and ultrashallow junction performance metrics, (ii) thin-body structure formation, and (iii) contact methodologies in Ge.

UR - https://www.scopus.com/pages/publications/84869022914

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DO - 10.1149/1.3700468

M3 - Conference proceeding

AN - SCOPUS:84869022914

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BT - Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications 4

PB - Electrochemical Society Inc.

T2 - 4th International Symposium on Graphene, Ge/III-V and Emerging Materials for Post-CMOS Applications - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -

Germanium doping, contacts, and thin-body structures

Abstract

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