@inbook{61fc714b1af34e68ab1e1d245c871a06,
title = "Ge/Si p-n diode fabricated by direct wafer bonding and layer exfoliation",
abstract = "We report on the formation and electrical characterization of current transport across a p-Ge to n-Si diode structure obtained by direct wafer bonding and layer exfoliation. A low temperature anneal at 400°C for 30 minutes improved the forward characteristics of the diode. The Ion/I off ratio > 5 × 104 and > 8 × 10 3 is obtained at -0.5 V and -1 V, respectively. The carrier transport mechanism was analyzed based on the I-V and C-V measurements and direct tunneling is suggested as the transport mechanism. This fabrication technique using a low thermal budget (T ≤ 400°C) is an attractive option for heterogeneous integration.",
author = "F. Gity and Byun, \{K. Y.\} and Lee, \{K. H.\} and K. Cherkaoui and Hayes, \{J. M.\} and Morrison, \{A. P.\} and C. Colinge and B. Corbett",
year = "2012",
doi = "10.1149/1.3700946",
language = "English",
isbn = "9781566779586",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "131--139",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2",
address = "United States",
edition = "6",
note = "International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}