Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

Farzan Gity

doi:10.1149/ma2012-01/20/870

Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Meeting Abstracts
DOIs	https://doi.org/10.1149/ma2012-01/20/870
Publication status	Published - 2012

Keywords

Wafer
Exfoliation joint
Wafer bonding
Layer (electronics)
Materials science
Optoelectronics
Diode
Direct bonding
Nanotechnology
Graphene

Access to Document

10.1149/ma2012-01/20/870

https://openalex.org/W4229658424Licence: CC BY-NC-ND

Cite this

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title = "Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation",

keywords = "Wafer, Exfoliation joint, Wafer bonding, Layer (electronics), Materials science, Optoelectronics, Diode, Direct bonding, Nanotechnology, Graphene",

author = "Farzan Gity",

year = "2012",

doi = "10.1149/ma2012-01/20/870",

language = "English",

journal = "Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Layer Exfoliation

AU - Gity, Farzan

PY - 2012

Y1 - 2012

KW - Wafer

KW - Exfoliation joint

KW - Wafer bonding

KW - Layer (electronics)

KW - Materials science

KW - Optoelectronics

KW - Diode

KW - Direct bonding

KW - Nanotechnology

KW - Graphene

U2 - 10.1149/ma2012-01/20/870

DO - 10.1149/ma2012-01/20/870

M3 - Article

SN - 1091-8213

JO - Meeting Abstracts

JF - Meeting Abstracts

ER -