Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers

Fatih Bilge Atar; Alper Yesilyurt; Mehmet Cengiz Onbasli; Oguz Hanoglu; Ali K. Okyay

doi:10.1109/LED.2011.2164390

Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers

Fatih Bilge Atar
, Alper Yesilyurt
, Mehmet Cengiz Onbasli
, Oguz Hanoglu
, Ali K. Okyay

Research output: Contribution to journal › Article › peer-review

Abstract

The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.

Original language	English
Article number	6022744
Pages (from-to)	1567-1569
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2164390
Publication status	Published - Nov 2011
Externally published	Yes

Keywords

Bolometers
Germanium
Quantum wells
Silicon

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10.1109/LED.2011.2164390

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title = "Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers",

abstract = "The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8\%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.",

keywords = "Bolometers, Germanium, Quantum wells, Silicon",

author = "Atar, \{Fatih Bilge\} and Alper Yesilyurt and Onbasli, \{Mehmet Cengiz\} and Oguz Hanoglu and Okyay, \{Ali K.\}",

year = "2011",

month = nov,

doi = "10.1109/LED.2011.2164390",

language = "English",

volume = "32",

pages = "1567--1569",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Atar, Fatih Bilge

AU - Yesilyurt, Alper

AU - Onbasli, Mehmet Cengiz

AU - Hanoglu, Oguz

AU - Okyay, Ali K.

PY - 2011/11

Y1 - 2011/11

N2 - The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.

AB - The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as-5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.

KW - Bolometers

KW - Germanium

KW - Quantum wells

KW - Silicon

UR - https://www.scopus.com/pages/publications/80054982750

U2 - 10.1109/LED.2011.2164390

DO - 10.1109/LED.2011.2164390

M3 - Article

AN - SCOPUS:80054982750

SN - 0741-3106

VL - 32

SP - 1567

EP - 1569

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6022744

ER -

Ge/SiGe quantum well P-I-N structures for uncooled infrared bolometers

Abstract

Keywords

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