GHz bandwidth semipolar (1122) InGaN/GaN light-emitting diodes

Duc V. Dinh; Zhiheng Quan; Brendan Roycroft; Peter J. Parbrook; Brian Corbett

doi:10.1364/OL.41.005752

GHz bandwidth semipolar (1122) InGaN/GaN light-emitting diodes

Duc V. Dinh
, Zhiheng Quan
, Brendan Roycroft
, Peter J. Parbrook
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (1122) InGaN/GaN light-emitting diodes (LEDs) operating at 430-450 nm grown on high-quality (1122) GaN templates, which were prepared on patterned (1012) r-plane sapphire substrates. The measured frequency response at -3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-returnto- zero on-off keying modulation scheme. This indicates that (1122) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.

Original language	English
Pages (from-to)	5752-5755
Number of pages	4
Journal	Optics Letters
Volume	41
Issue number	24
DOIs	https://doi.org/10.1364/OL.41.005752
Publication status	Published - 15 Dec 2016

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title = "GHz bandwidth semipolar (1122) InGaN/GaN light-emitting diodes",

abstract = "We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (1122) InGaN/GaN light-emitting diodes (LEDs) operating at 430-450 nm grown on high-quality (1122) GaN templates, which were prepared on patterned (1012) r-plane sapphire substrates. The measured frequency response at -3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-returnto- zero on-off keying modulation scheme. This indicates that (1122) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.",

author = "Dinh, \{Duc V.\} and Zhiheng Quan and Brendan Roycroft and Parbrook, \{Peter J.\} and Brian Corbett",

note = "Publisher Copyright: {\textcopyright} 2016 Optical Society of America.",

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doi = "10.1364/OL.41.005752",

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T1 - GHz bandwidth semipolar (1122) InGaN/GaN light-emitting diodes

AU - Dinh, Duc V.

AU - Quan, Zhiheng

AU - Roycroft, Brendan

AU - Parbrook, Peter J.

AU - Corbett, Brian

PY - 2016/12/15

Y1 - 2016/12/15

N2 - We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (1122) InGaN/GaN light-emitting diodes (LEDs) operating at 430-450 nm grown on high-quality (1122) GaN templates, which were prepared on patterned (1012) r-plane sapphire substrates. The measured frequency response at -3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-returnto- zero on-off keying modulation scheme. This indicates that (1122) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.

AB - We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (1122) InGaN/GaN light-emitting diodes (LEDs) operating at 430-450 nm grown on high-quality (1122) GaN templates, which were prepared on patterned (1012) r-plane sapphire substrates. The measured frequency response at -3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-returnto- zero on-off keying modulation scheme. This indicates that (1122) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.

UR - https://www.scopus.com/pages/publications/85009374182

U2 - 10.1364/OL.41.005752

DO - 10.1364/OL.41.005752

M3 - Article

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SN - 0146-9592

VL - 41

SP - 5752

EP - 5755

JO - Optics Letters

JF - Optics Letters

IS - 24

ER -

GHz bandwidth semipolar (1122) InGaN/GaN light-emitting diodes

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