TY - CHAP
T1 - Giant mobility enhancement in highly strained, direct gap Ge
AU - Murphy-Armando, F.
AU - Fahy, S.
PY - 2011
Y1 - 2011
N2 - First-principles electronic structure methods are used to predict the rate of n-type carrier scattering due to phonons in highly-strained Ge. We show that strains achievable in nanoscale structures, where Ge becomes a direct band-gap semiconductor, cause the phonon-limited mobility to be enhanced by hundreds of times that of unstrained Ge, and over a thousand times that of Si.
AB - First-principles electronic structure methods are used to predict the rate of n-type carrier scattering due to phonons in highly-strained Ge. We show that strains achievable in nanoscale structures, where Ge becomes a direct band-gap semiconductor, cause the phonon-limited mobility to be enhanced by hundreds of times that of unstrained Ge, and over a thousand times that of Si.
UR - https://www.scopus.com/pages/publications/79957980530
U2 - 10.1109/ULIS.2011.5757987
DO - 10.1109/ULIS.2011.5757987
M3 - Chapter
AN - SCOPUS:79957980530
SN - 9781457700903
T3 - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
SP - 199
EP - 201
BT - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
T2 - 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Y2 - 14 March 2011 through 16 March 2011
ER -