Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques

Mike R. Lazell; Paul O'Brien; David J. Otway; Jin H.O. Park

Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques

Mike R. Lazell
, Paul O'Brien
, David J. Otway
, Jin H.O. Park

Research output: Contribution to journal › Article › peer-review

Abstract

Several single-source precursors including In(SOCNⁱBu₂)₃, In(S₂CNMeHex)₃ and Ga(S₂CNMeR)₃, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α- and β-In₂S₃ thin films on borosilicate glass and α-Ga₂S₃ thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semiconducting materials have been characterized by XRD, SEM, XPS and EDAX.

Original language	English
Pages (from-to)	127-132
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	606
Publication status	Published - 2000
Externally published	Yes
Event	Chemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA Duration: 29 Nov 1999 → 1 Dec 1999

Cite this

@article{19d5cbca0f884c08843e979193e836a9,

title = "Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques",

abstract = "Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α- and β-In2S3 thin films on borosilicate glass and α-Ga2S3 thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semiconducting materials have been characterized by XRD, SEM, XPS and EDAX.",

author = "Lazell, \{Mike R.\} and Paul O'Brien and Otway, \{David J.\} and Park, \{Jin H.O.\}",

year = "2000",

language = "English",

volume = "606",

pages = "127--132",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Springer Nature",

note = "Chemical Processing of Dielectrics, Insulators and Electronic Ceramics ; Conference date: 29-11-1999 Through 01-12-1999",

}

TY - JOUR

T1 - Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques

AU - Lazell, Mike R.

AU - O'Brien, Paul

AU - Otway, David J.

AU - Park, Jin H.O.

PY - 2000

Y1 - 2000

N2 - Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α- and β-In2S3 thin films on borosilicate glass and α-Ga2S3 thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semiconducting materials have been characterized by XRD, SEM, XPS and EDAX.

AB - Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α- and β-In2S3 thin films on borosilicate glass and α-Ga2S3 thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semiconducting materials have been characterized by XRD, SEM, XPS and EDAX.

UR - https://www.scopus.com/pages/publications/0033678120

M3 - Article

AN - SCOPUS:0033678120

SN - 0272-9172

VL - 606

SP - 127

EP - 132

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Chemical Processing of Dielectrics, Insulators and Electronic Ceramics

Y2 - 29 November 1999 through 1 December 1999

ER -

Group III metal sulfide thin films from single-source precursors by chemical vapor deposition (CVD) techniques

Abstract

Other files and links

Fingerprint

Cite this