Abstract
Several single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α- and β-In2S3 thin films on borosilicate glass and α-Ga2S3 thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semiconducting materials have been characterized by XRD, SEM, XPS and EDAX.
| Original language | English |
|---|---|
| Pages (from-to) | 127-132 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 606 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | Chemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA Duration: 29 Nov 1999 → 1 Dec 1999 |
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