Growth of indium selenide thin films from a novel asymmetric dialkyldiselenocarbamate of indium

Paul O'Brien; David J. Otway; John R. Walsh

Growth of indium selenide thin films from a novel asymmetric dialkyldiselenocarbamate of indium

Paul O'Brien
, David J. Otway
, John R. Walsh

Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Thin films of cubic In₂Se₃ have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se₂CNMe n-hexyl)₃. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe₂ is described. Films were grown on glass and InP(111) between 450 and 500 °C, and characterized by X-ray diffraction and scanning electron microscopy.

Original language	English
Pages (from-to)	227-229
Number of pages	3
Journal	Advanced Materials
Volume	9
Issue number	10
Publication status	Published - 8 Aug 1997
Externally published	Yes

Cite this

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title = "Growth of indium selenide thin films from a novel asymmetric dialkyldiselenocarbamate of indium",

abstract = "Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500 °C, and characterized by X-ray diffraction and scanning electron microscopy.",

author = "Paul O'Brien and Otway, \{David J.\} and Walsh, \{John R.\}",

year = "1997",

month = aug,

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language = "English",

volume = "9",

pages = "227--229",

journal = "Advanced Materials",

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AU - O'Brien, Paul

AU - Otway, David J.

AU - Walsh, John R.

PY - 1997/8/8

Y1 - 1997/8/8

N2 - Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500 °C, and characterized by X-ray diffraction and scanning electron microscopy.

AB - Thin films of cubic In2Se3 have been grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) using the novel precursor In(Se2CNMe n-hexyl)3. The precursor was prepared from carbon diselenide and a modified experimental procedure for the synthesis of CSe2 is described. Films were grown on glass and InP(111) between 450 and 500 °C, and characterized by X-ray diffraction and scanning electron microscopy.

UR - https://www.scopus.com/pages/publications/0031559488

M3 - Article

AN - SCOPUS:0031559488

SN - 0935-9648

VL - 9

SP - 227

EP - 229

JO - Advanced Materials

JF - Advanced Materials

IS - 10

ER -

Growth of indium selenide thin films from a novel asymmetric dialkyldiselenocarbamate of indium

Abstract

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