Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett; Tetsuya Suemitsu; Niamh Waldron; Jesús A. Del Alamo

doi:10.1016/j.jcrysgro.2004.12.070

Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett
, Tetsuya Suemitsu
, Niamh Waldron
, Jesús A. Del Alamo

Research output: Contribution to journal › Article › peer-review

Abstract

InP high electron mobility transistor (HEMT) structures with In _0.53Ga_0.47As channels and In_0.52Al _0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm²/V-s and sheet densities of 1-4×10 ¹²/cm². Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

Original language	English
Pages (from-to)	596-599
Number of pages	4
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.070
Publication status	Published - 1 May 2005
Externally published	Yes
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 22 Aug 2004 → 27 Aug 2004

Keywords

A1. Doping
A3. Molecular beam epitaxy
B1. Arsenides
B2. Semiconducting III-V materials
B3. Field effect transistors
B3. High electron mobility transistors

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10.1016/j.jcrysgro.2004.12.070

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title = "Growth of InP high electron mobility transistor structures with Te doping",

abstract = "InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 {\AA} InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.",

keywords = "A1. Doping, A3. Molecular beam epitaxy, B1. Arsenides, B2. Semiconducting III-V materials, B3. Field effect transistors, B3. High electron mobility transistors",

author = "Bennett, \{Brian R.\} and Tetsuya Suemitsu and Niamh Waldron and \{Del Alamo\}, \{Jes{\'u}s A.\}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.070",

language = "English",

volume = "278",

pages = "596--599",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Growth of InP high electron mobility transistor structures with Te doping

AU - Bennett, Brian R.

AU - Suemitsu, Tetsuya

AU - Waldron, Niamh

AU - Del Alamo, Jesús A.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

AB - InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

KW - A1. Doping

KW - A3. Molecular beam epitaxy

KW - B1. Arsenides

KW - B2. Semiconducting III-V materials

KW - B3. Field effect transistors

KW - B3. High electron mobility transistors

UR - https://www.scopus.com/pages/publications/18444386219

U2 - 10.1016/j.jcrysgro.2004.12.070

DO - 10.1016/j.jcrysgro.2004.12.070

M3 - Article

AN - SCOPUS:18444386219

SN - 0022-0248

VL - 278

SP - 596

EP - 599

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Growth of InP high electron mobility transistor structures with Te doping

Abstract

Keywords

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