Growth of v2o5 Films for Battery Applications by Pulsed Chemical Vapor Deposition

I. I. Kazadojev; S. O'brien; L. P. Ryan; M. Modreanu; P. Osiceanub; S. Somacescub; D. Vernardou; M. E. Pemble; I. M. Povey

doi:10.1149/08513.0083ecst

Growth of v₂o₅ Films for Battery Applications by Pulsed Chemical Vapor Deposition

I. I. Kazadojev
, S. O'brien
, L. P. Ryan
, M. Modreanu
, P. Osiceanub
, S. Somacescub
, D. Vernardou
, M. E. Pemble
, I. M. Povey

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Pulsed chemical vapor deposition (CVD), or more correctly atomic layer deposition (ALD) outside of the ALD thermal window, was used to grow vanadium pentoxide films using Tetrakis(dimethylamino)vanadium (IV) (V(NMe2)4) as the vanadium source and either oxygen-argon plasma, oxygen or water as the co-reagent. Growths were performed at 150-300'C for 400 cycles, resulting in a range of both stoichiometric and non- stoichiometric vanadium oxides. Post growth annealing in air at 400'C for both thermal and plasma assisted methods resulted in the formation of α-V₂O₅. Electrochemical characterization revealed that the samples grown at 250'C using a plasma process and a post growth anneal demonstrate the best electrochemical properties in terms of current density and charge density with values of 0.35 mAcm^-2and 55 mCcm^-2 respectively. The influence of growth parameters on material properties is discussed.

Original language	English
Title of host publication	ECS Transactions
Publisher	Electrochemical Society Inc.
Pages	83-94
Number of pages	12
Edition	13
ISBN (Electronic)	9781607688419
ISBN (Print)	9781510866171
DOIs	https://doi.org/10.1149/08513.0083ecst
Publication status	Published - 2018
Event	233rd Meeting of the Electrochemical Society - Seattle, United States Duration: 13 May 2018 → 17 May 2018

Publication series

Name	ECS Transactions
Number	13
Volume	85
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	233rd Meeting of the Electrochemical Society
Country/Territory	United States
City	Seattle
Period	13/05/18 → 17/05/18

Access to Document

10.1149/08513.0083ecst

Cite this

Kazadojev, I. I., O'brien, S., Ryan, L. P., Modreanu, M., Osiceanub, P., Somacescub, S., Vernardou, D., Pemble, M. E., & Povey, I. M. (2018). Growth of v₂o₅ Films for Battery Applications by Pulsed Chemical Vapor Deposition. In ECS Transactions (13 ed., pp. 83-94). (ECS Transactions; Vol. 85, No. 13). Electrochemical Society Inc.. https://doi.org/10.1149/08513.0083ecst

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abstract = "Pulsed chemical vapor deposition (CVD), or more correctly atomic layer deposition (ALD) outside of the ALD thermal window, was used to grow vanadium pentoxide films using Tetrakis(dimethylamino)vanadium (IV) (V(NMe2)4) as the vanadium source and either oxygen-argon plasma, oxygen or water as the co-reagent. Growths were performed at 150-300'C for 400 cycles, resulting in a range of both stoichiometric and non- stoichiometric vanadium oxides. Post growth annealing in air at 400'C for both thermal and plasma assisted methods resulted in the formation of α-V2O5. Electrochemical characterization revealed that the samples grown at 250'C using a plasma process and a post growth anneal demonstrate the best electrochemical properties in terms of current density and charge density with values of 0.35 mAcm-2and 55 mCcm-2 respectively. The influence of growth parameters on material properties is discussed.",

author = "Kazadojev, \{I. I.\} and S. O'brien and Ryan, \{L. P.\} and M. Modreanu and P. Osiceanub and S. Somacescub and D. Vernardou and Pemble, \{M. E.\} and Povey, \{I. M.\}",

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Kazadojev, II, O'brien, S, Ryan, LP, Modreanu, M, Osiceanub, P, Somacescub, S, Vernardou, D, Pemble, ME & Povey, IM 2018, Growth of v₂o₅ Films for Battery Applications by Pulsed Chemical Vapor Deposition. in ECS Transactions. 13 edn, ECS Transactions, no. 13, vol. 85, Electrochemical Society Inc., pp. 83-94, 233rd Meeting of the Electrochemical Society, Seattle, United States, 13/05/18. https://doi.org/10.1149/08513.0083ecst

TY - CHAP

T1 - Growth of v2o5 Films for Battery Applications by Pulsed Chemical Vapor Deposition

AU - Kazadojev, I. I.

AU - O'brien, S.

AU - Ryan, L. P.

AU - Modreanu, M.

AU - Osiceanub, P.

AU - Somacescub, S.

AU - Vernardou, D.

AU - Pemble, M. E.

AU - Povey, I. M.

PY - 2018

Y1 - 2018

N2 - Pulsed chemical vapor deposition (CVD), or more correctly atomic layer deposition (ALD) outside of the ALD thermal window, was used to grow vanadium pentoxide films using Tetrakis(dimethylamino)vanadium (IV) (V(NMe2)4) as the vanadium source and either oxygen-argon plasma, oxygen or water as the co-reagent. Growths were performed at 150-300'C for 400 cycles, resulting in a range of both stoichiometric and non- stoichiometric vanadium oxides. Post growth annealing in air at 400'C for both thermal and plasma assisted methods resulted in the formation of α-V2O5. Electrochemical characterization revealed that the samples grown at 250'C using a plasma process and a post growth anneal demonstrate the best electrochemical properties in terms of current density and charge density with values of 0.35 mAcm-2and 55 mCcm-2 respectively. The influence of growth parameters on material properties is discussed.

AB - Pulsed chemical vapor deposition (CVD), or more correctly atomic layer deposition (ALD) outside of the ALD thermal window, was used to grow vanadium pentoxide films using Tetrakis(dimethylamino)vanadium (IV) (V(NMe2)4) as the vanadium source and either oxygen-argon plasma, oxygen or water as the co-reagent. Growths were performed at 150-300'C for 400 cycles, resulting in a range of both stoichiometric and non- stoichiometric vanadium oxides. Post growth annealing in air at 400'C for both thermal and plasma assisted methods resulted in the formation of α-V2O5. Electrochemical characterization revealed that the samples grown at 250'C using a plasma process and a post growth anneal demonstrate the best electrochemical properties in terms of current density and charge density with values of 0.35 mAcm-2and 55 mCcm-2 respectively. The influence of growth parameters on material properties is discussed.

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