Heavy Ion Microbeam Experimental Study of ASET on a Full-Custom CMOS OpAmp

  • A. Fontana
  • , S. M. Pazos
  • , F. L. Aguirre
  • , F. Palumbo
  • , N. Vega
  • , N. A. Muller
  • , E. De La Fourniere
  • , M. Debray

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

An experimental evaluation of the sensitivity to Analog Single Events of a full-custom CMOS Operational Amplifier is reported. The output voltage waveform due to single ion impacts was studied, by scanning the entire area of the circuit under test, using the heavy ion microbeam facility at TANDAR laboratory. A two-dimensional map of the transients captured in the design was obtained, in which the grouping of events in the most sensitive transistors of the circuit can be seen, showing great agreement with results obtained by means of a SPICE simulation environment. Experimental validation of sensitivity provides a better insight into the true resilience against single events of a 180nm technology custom circuit, and shows that the microbeam facility is fit to perform integrated circuit irradiation to extract information down to the single transistor resolution.

Original languageEnglish
Title of host publication31st Symposium on Integrated Circuits and Systems Design, SBCCI 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538674314
DOIs
Publication statusPublished - 12 Nov 2018
Externally publishedYes
Event31st Symposium on Integrated Circuits and Systems Design, SBCCI 2018 - Bento Goncalves, Brazil
Duration: 27 Aug 201831 Aug 2018

Publication series

Name31st Symposium on Integrated Circuits and Systems Design, SBCCI 2018

Conference

Conference31st Symposium on Integrated Circuits and Systems Design, SBCCI 2018
Country/TerritoryBrazil
CityBento Goncalves
Period27/08/1831/08/18

Keywords

  • Analog Single Event Transients (ASET)
  • charge collection
  • heavy ion
  • Microbeam
  • radiation

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