@inbook{f4b0cbdfc99e4e73a9fb9f590b981bd8,
title = "Heteroepitaxy of III-V compound semiconductors on silicon for logic applications: Selective area epitaxy in shallow trench isolation structures vs. Direct epitaxy mediated by strain relaxed buffers",
abstract = "We report two approaches to integrate high quality III-V templates with low defectivity on Si wafers by epitaxial growth. The first approach is based on blanket, InGaAs-based Strain Relaxed Buffers grown by MOVPE on 200mm Si, and the second on the selective area MOVPE of InP in Shallow Trench Isolation structures patterned on 300mm Si. Both structures are characterized structurally and show the efficient trapping and annihilation of defects propagating from the Si/III-V interface. We believe these two approaches represent viable alternatives towards the realization of CMOS-compatible III-V templates and stacks for high-performance devices monolithically integrated on Si.",
author = "M. Cantoro and C. Merckling and S. Jiang and W. Guo and N. Waldron and H. Bender and A. Moussa and B. Douhard and W. Vandervorst and Heyns, \{M. M.\} and J. Dekoster and R. Loo and M. Caymax",
year = "2013",
doi = "10.1149/05009.0349ecst",
language = "English",
isbn = "9781607683575",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "349--355",
booktitle = "SiGe, Ge, and Related Compounds 5",
address = "United States",
edition = "9",
note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",
}