Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
- C. Merckling
- , N. Waldron
- , S. Jiang
- , W. Guo
- , N. Collaert
- , M. Caymax
- , E. Vancoille
- , K. Barla
- , A. Thean
- , M. Heyns
- , W. Vandervorst
Research output: Contribution to journal › Article › peer-review