Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics

A. V.Y. Thean; N. Collaert; I. Radu; N. Waldron; C. Merckling; L. Witters; R. Loo; J. Mitard; R. Rooyackers; A. Vandooren; A. Verhulst; A. Veloso; D. Yakimets; T. Huynh Bao; D. Chiappe; A. Vaysset; O. Zografos; M. Caymax; C. Huyghebaert; K. Barla; A. Steegen

doi:10.1149/06604.0003ecst

Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics

A. V.Y. Thean
, N. Collaert
, I. Radu
, N. Waldron
, C. Merckling
, L. Witters
, R. Loo
, J. Mitard
, R. Rooyackers
, A. Vandooren
, A. Verhulst
, A. Veloso
, D. Yakimets
, T. Huynh Bao
, D. Chiappe
, A. Vaysset
, O. Zografos
, M. Caymax
, C. Huyghebaert
, K. Barla

A. Steegen

Interuniversitair Micro-Elektronica Centrum

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
Editors	E. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
Publisher	Electrochemical Society Inc.
Pages	3-14
Number of pages	12
Edition	4
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06604.0003ecst
Publication status	Published - 2015
Externally published	Yes
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States Duration: 24 May 2015 → 28 May 2015

Publication series

Name	ECS Transactions
Number	4
Volume	66
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	24/05/15 → 28/05/15

Access to Document

10.1149/06604.0003ecst

Cite this

Thean, A. V. Y., Collaert, N., Radu, I., Waldron, N., Merckling, C., Witters, L., Loo, R., Mitard, J., Rooyackers, R., Vandooren, A., Verhulst, A., Veloso, A., Yakimets, D., Bao, T. H., Chiappe, D., Vaysset, A., Zografos, O., Caymax, M., Huyghebaert, C., ... Steegen, A. (2015). Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics. In E. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, & Z. Karim (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., pp. 3-14). (ECS Transactions; Vol. 66, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0003ecst

Thean, A. V.Y. ; Collaert, N. ; Radu, I. et al. / Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. editor / E. P. Gusev ; P. J. Timans ; F. Roozeboom ; S. DeGendt ; K. Kakushima ; V. Narayanan ; Z. Karim. 4. ed. Electrochemical Society Inc., 2015. pp. 3-14 (ECS Transactions; 4).

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title = "Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics",

abstract = "This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.",

author = "Thean, \{A. V.Y.\} and N. Collaert and I. Radu and N. Waldron and C. Merckling and L. Witters and R. Loo and J. Mitard and R. Rooyackers and A. Vandooren and A. Verhulst and A. Veloso and D. Yakimets and Bao, \{T. Huynh\} and D. Chiappe and A. Vaysset and O. Zografos and M. Caymax and C. Huyghebaert and K. Barla and A. Steegen",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06604.0003ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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pages = "3--14",

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booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",

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Thean, AVY, Collaert, N, Radu, I, Waldron, N, Merckling, C, Witters, L, Loo, R, Mitard, J, Rooyackers, R, Vandooren, A, Verhulst, A, Veloso, A, Yakimets, D, Bao, TH, Chiappe, D, Vaysset, A, Zografos, O, Caymax, M, Huyghebaert, C, Barla, K & Steegen, A 2015, Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics. in EP Gusev, PJ Timans, F Roozeboom, S DeGendt, K Kakushima, V Narayanan & Z Karim (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, ECS Transactions, no. 4, vol. 66, Electrochemical Society Inc., pp. 3-14, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 24/05/15. https://doi.org/10.1149/06604.0003ecst

Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics. / Thean, A. V.Y.; Collaert, N.; Radu, I. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. ed. / E. P. Gusev; P. J. Timans; F. Roozeboom; S. DeGendt; K. Kakushima; V. Narayanan; Z. Karim. 4. ed. Electrochemical Society Inc., 2015. p. 3-14 (ECS Transactions; Vol. 66, No. 4).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics

AU - Thean, A. V.Y.

AU - Collaert, N.

AU - Radu, I.

AU - Waldron, N.

AU - Merckling, C.

AU - Witters, L.

AU - Loo, R.

AU - Mitard, J.

AU - Rooyackers, R.

AU - Vandooren, A.

AU - Verhulst, A.

AU - Veloso, A.

AU - Yakimets, D.

AU - Bao, T. Huynh

AU - Chiappe, D.

AU - Vaysset, A.

AU - Zografos, O.

AU - Caymax, M.

AU - Huyghebaert, C.

AU - Barla, K.

AU - Steegen, A.

PY - 2015

Y1 - 2015

N2 - This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.

AB - This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.

UR - https://www.scopus.com/pages/publications/84931350440

U2 - 10.1149/06604.0003ecst

DO - 10.1149/06604.0003ecst

M3 - Chapter

AN - SCOPUS:84931350440

T3 - ECS Transactions

SP - 3

EP - 14

BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5

A2 - Gusev, E. P.

A2 - Timans, P. J.

A2 - Roozeboom, F.

A2 - DeGendt, S.

A2 - Kakushima, K.

A2 - Narayanan, V.

A2 - Karim, Z.

PB - Electrochemical Society Inc.

T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting

Y2 - 24 May 2015 through 28 May 2015

ER -

Thean AVY, Collaert N, Radu I, Waldron N, Merckling C, Witters L et al. Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics. In Gusev EP, Timans PJ, Roozeboom F, DeGendt S, Kakushima K, Narayanan V, Karim Z, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 ed. Electrochemical Society Inc. 2015. p. 3-14. (ECS Transactions; 4). doi: 10.1149/06604.0003ecst

Heterogeneous nano-to wide-scale co-integration of beyond-Si and Si CMOS devices to enhance future electronics

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