@inproceedings{5092fbdd6bbc4519a204e25ee8736333,
title = "Heterostructure at CMOS source/drain: Contributor or alleviator to the high access resistance problem?",
abstract = "This work investigates the interface resistivity of several heterostructures. Theoretical simulations suggest that, apart from the doping impact, the band offset and the difference in density of states (DOS) increase significantly the heterostructure interface resistivity. This conclusion corresponds well to our experiments that 1) high interface resistances are observed between (high-Ge content) p-SiGe/p-Si, n-InAs/n-Si, and n-InAs/n-Ge; and that 2) a TiSix/12nm Si:P/n-Ge contact with favorable band alignment between Si:P/n-Ge approaches low effective contact resistivity of 1.4×10-8 Ω cm2, close to a record-low value for n-Ge contacts.",
author = "Hao Yu and M. Schaekers and E. Rosseel and Everaert, \{J. L.\} and P. Eyben and T. Chiarella and C. Merckling and Agarwal, \{T. K.\} and G. Pourtois and A. Hikavyy and S. Kubicek and L. Witters and A. Sibaja-Hernandez and J. Mitard and N. Waldron and Chew, \{S. A.\} and S. Demuynck and N. Horiguchi and K. Barla and Thean, \{A. V.Y.\} and A. Mocuta and D. Mocuta and N. Collaert and \{De Meyer\}, K.",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838476",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "25.1.1--25.1.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
address = "United States",
}