High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Micheal Burke; Alan Blake; Vladimir Djara; Dan O'Connell; Ian M. Povey; Karim Cherkaoui; Scott Monaghan; Jim Scully; Richard Murphy; Paul K. Hurley; Martyn E. Pemble; Aidan J. Quinn

doi:10.1116/1.4891319

High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Micheal Burke
, Alan Blake
, Vladimir Djara
, Dan O'Connell
, Ian M. Povey
, Karim Cherkaoui
, Scott Monaghan
, Jim Scully
, Richard Murphy
, Paul K. Hurley
, Martyn E. Pemble
, Aidan J. Quinn

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report on the structural and electrical properties of TiN/Al₂O₃/TiN metal-insulator-metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼ 30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μ m² and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm² at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

Original language	English
Article number	01A103
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	33
Issue number	1
DOIs	https://doi.org/10.1116/1.4891319
Publication status	Published - Jan 2015

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10.1116/1.4891319

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Burke, M., Blake, A., Djara, V., O'Connell, D., Povey, I. M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P. K., Pemble, M. E., & Quinn, A. J. (2015). High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 33(1), Article 01A103. https://doi.org/10.1116/1.4891319

@article{539cae0a2ca74d149a6dbcc01f4f8f85,

title = "High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition",

abstract = "The authors report on the structural and electrical properties of TiN/Al2O3/TiN metal-insulator-metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼ 30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μ m2 and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm2 at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.",

author = "Micheal Burke and Alan Blake and Vladimir Djara and Dan O'Connell and Povey, \{Ian M.\} and Karim Cherkaoui and Scott Monaghan and Jim Scully and Richard Murphy and Hurley, \{Paul K.\} and Pemble, \{Martyn E.\} and Quinn, \{Aidan J.\}",

year = "2015",

month = jan,

doi = "10.1116/1.4891319",

language = "English",

volume = "33",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

Burke, M, Blake, A, Djara, V, O'Connell, D , Povey, IM , Cherkaoui, K, Monaghan, S, Scully, J , Murphy, R , Hurley, PK, Pemble, ME & Quinn, AJ 2015, 'High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 33, no. 1, 01A103. https://doi.org/10.1116/1.4891319

TY - JOUR

T1 - High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

AU - Burke, Micheal

AU - Blake, Alan

AU - Djara, Vladimir

AU - O'Connell, Dan

AU - Povey, Ian M.

AU - Cherkaoui, Karim

AU - Monaghan, Scott

AU - Scully, Jim

AU - Murphy, Richard

AU - Hurley, Paul K.

AU - Pemble, Martyn E.

AU - Quinn, Aidan J.

PY - 2015/1

Y1 - 2015/1

N2 - The authors report on the structural and electrical properties of TiN/Al2O3/TiN metal-insulator-metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼ 30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μ m2 and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm2 at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

AB - The authors report on the structural and electrical properties of TiN/Al2O3/TiN metal-insulator-metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼ 30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μ m2 and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm2 at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

UR - https://www.scopus.com/pages/publications/84904985985

U2 - 10.1116/1.4891319

DO - 10.1116/1.4891319

M3 - Article

AN - SCOPUS:84904985985

SN - 0734-2101

VL - 33

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

M1 - 01A103

ER -

High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

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