High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes

Zhiheng Quan; Duc V. Dinh; Silvino Presa; Brendan Roycroft; Ann Foley; Mahbub Akhter; Donagh O'Mahony; Pleun P. Maaskant; Marian Caliebe; Ferdinand Scholz; Peter J. Parbrook; Brian Corbett

doi:10.1109/JPHOT.2016.2596245

High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes

Zhiheng Quan
, Duc V. Dinh
, Silvino Presa
, Brendan Roycroft
, Ann Foley
, Mahbub Akhter
, Donagh O'Mahony
, Pleun P. Maaskant
, Marian Caliebe
, Ferdinand Scholz
, Peter J. Parbrook
, Brian Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 μm × 300 μm LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11-23]_InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	IEEE Photonics Journal
Volume	8
Issue number	5
DOIs	https://doi.org/10.1109/JPHOT.2016.2596245
Publication status	Published - Oct 2016

Keywords

laser lift-off (LLO)
Light-emitting diodes (LEDs)
metal organic vapor phase epitaxy (MOVPE)
optoelectronic materials
semipolar gallium nitride (GaN)

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10.1109/JPHOT.2016.2596245

https://hdl.handle.net/10468/3258Licence: CC BY-NC-ND

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@article{611434b2bfe24e748b5b131169ade067,

title = "High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes",

abstract = "Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 μm × 300 μm LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11-23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.",

keywords = "laser lift-off (LLO), Light-emitting diodes (LEDs), metal organic vapor phase epitaxy (MOVPE), optoelectronic materials, semipolar gallium nitride (GaN)",

author = "Zhiheng Quan and Dinh, \{Duc V.\} and Silvino Presa and Brendan Roycroft and Ann Foley and Mahbub Akhter and Donagh O'Mahony and Maaskant, \{Pleun P.\} and Marian Caliebe and Ferdinand Scholz and Parbrook, \{Peter J.\} and Brian Corbett",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = oct,

doi = "10.1109/JPHOT.2016.2596245",

language = "English",

volume = "8",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes

AU - Quan, Zhiheng

AU - Dinh, Duc V.

AU - Presa, Silvino

AU - Roycroft, Brendan

AU - Foley, Ann

AU - Akhter, Mahbub

AU - O'Mahony, Donagh

AU - Maaskant, Pleun P.

AU - Caliebe, Marian

AU - Scholz, Ferdinand

AU - Parbrook, Peter J.

AU - Corbett, Brian

PY - 2016/10

Y1 - 2016/10

N2 - Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 μm × 300 μm LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11-23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

AB - Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 μm × 300 μm LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11-23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

KW - laser lift-off (LLO)

KW - Light-emitting diodes (LEDs)

KW - metal organic vapor phase epitaxy (MOVPE)

KW - optoelectronic materials

KW - semipolar gallium nitride (GaN)

UR - https://www.scopus.com/pages/publications/85027016277

U2 - 10.1109/JPHOT.2016.2596245

DO - 10.1109/JPHOT.2016.2596245

M3 - Article

AN - SCOPUS:85027016277

SN - 1943-0655

VL - 8

SP - 1

EP - 8

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 5

ER -

High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes

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