Abstract
High brightness laser diodes with a narrow beam waist were fabricated on a weakly guiding InGaAs/GaAs/AlGaAs structure. The material was grown by metallorganic vapor phase epitaxy and was processed in preparation for pulse testing. Results demonstrated a convex curved-facet laser diode with peak output power of 0.58 watts at 3 amperes with a beam waist of only 11 μm emitted from the front cleaved facet. This design proved to be suitable for diffraction-limited high power continuous wave operations.
| Original language | English |
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| Pages (from-to) | 142-143 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 2 (of 2) - Boston, MA, USA Duration: 18 Nov 1996 → 21 Nov 1996 |