High brightness low voltage mesa style ZnSe light emitting diodes

J. Rennie; M. Onomura; Y. Nishikawa; S. Saito; P. J. Parbrook; K. Nitta; M. Ishikawa; G. Hatakoshi

doi:10.1049/el:19940717

High brightness low voltage mesa style ZnSe light emitting diodes

J. Rennie
, M. Onomura
, Y. Nishikawa
, S. Saito
, P. J. Parbrook
, K. Nitta
, M. Ishikawa
, G. Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

The authors have developed a ZnSe based blue-green (500m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200μW (3cd) for a current of 30mA, under an operating voltage of 8.6V, and had a record efficiency of 0.26%.

Original language	English
Pages (from-to)	1090-1091
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	13
DOIs	https://doi.org/10.1049/el:19940717
Publication status	Published - 23 Jun 1994
Externally published	Yes

Keywords

II-VI semiconductors
Light emitting diodes

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10.1049/el:19940717

Cite this

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title = "High brightness low voltage mesa style ZnSe light emitting diodes",

abstract = "The authors have developed a ZnSe based blue-green (500m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200μW (3cd) for a current of 30mA, under an operating voltage of 8.6V, and had a record efficiency of 0.26\%.",

keywords = "II-VI semiconductors, Light emitting diodes",

author = "J. Rennie and M. Onomura and Y. Nishikawa and S. Saito and Parbrook, \{P. J.\} and K. Nitta and M. Ishikawa and G. Hatakoshi",

year = "1994",

month = jun,

day = "23",

doi = "10.1049/el:19940717",

language = "English",

volume = "30",

pages = "1090--1091",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - High brightness low voltage mesa style ZnSe light emitting diodes

AU - Rennie, J.

AU - Onomura, M.

AU - Nishikawa, Y.

AU - Saito, S.

AU - Parbrook, P. J.

AU - Nitta, K.

AU - Ishikawa, M.

AU - Hatakoshi, G.

PY - 1994/6/23

Y1 - 1994/6/23

N2 - The authors have developed a ZnSe based blue-green (500m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200μW (3cd) for a current of 30mA, under an operating voltage of 8.6V, and had a record efficiency of 0.26%.

AB - The authors have developed a ZnSe based blue-green (500m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200μW (3cd) for a current of 30mA, under an operating voltage of 8.6V, and had a record efficiency of 0.26%.

KW - II-VI semiconductors

KW - Light emitting diodes

UR - https://www.scopus.com/pages/publications/0028448352

U2 - 10.1049/el:19940717

DO - 10.1049/el:19940717

M3 - Article

AN - SCOPUS:0028448352

SN - 0013-5194

VL - 30

SP - 1090

EP - 1091

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

High brightness low voltage mesa style ZnSe light emitting diodes

Abstract

Keywords

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