High brightness near-ultraviolet resonant LEDs

B. Corbett; D. Zhu; B. Roycroft; P. Maaskant; M. Akhter; C. McAleese; M. J. Kappers; C. J. Humphreys

doi:10.1002/pssc.200778405

High brightness near-ultraviolet resonant LEDs

B. Corbett
, D. Zhu
, B. Roycroft
, P. Maaskant
, M. Akhter
, C. McAleese
, M. J. Kappers
, C. J. Humphreys

Research output: Contribution to journal › Article › peer-review

Abstract

Planar near-ultraviolet 385 nm emitting resonant LEDs containing three quantum wells have been investigated as a function of the separation between the wells and a reflective and injecting metal mirror. The output power and far-field extracted through the substrate of the LEDs depend on the precise positions of the wells with each well having a significant individual influence on these properties. A doubling of the output power is obtained when the wells are located around the antinode position of the standing wave while narrower far-fields are obtained with other placement of the wells. A power of 0.4 mW into a numerical aperture of 0.5 is obtained for a current of 30 mA into a 50 μ m diameter contact. Calibration of the growth rate along with accurate knowledge of the material properties of the semiconductor and metal mirrors is required for controlled and enhanced emission from planar UV LEDs.

Original language	English
Pages (from-to)	2056-2058
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778405
Publication status	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: 16 Sep 2007 → 21 Sep 2007

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10.1002/pssc.200778405

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title = "High brightness near-ultraviolet resonant LEDs",

abstract = "Planar near-ultraviolet 385 nm emitting resonant LEDs containing three quantum wells have been investigated as a function of the separation between the wells and a reflective and injecting metal mirror. The output power and far-field extracted through the substrate of the LEDs depend on the precise positions of the wells with each well having a significant individual influence on these properties. A doubling of the output power is obtained when the wells are located around the antinode position of the standing wave while narrower far-fields are obtained with other placement of the wells. A power of 0.4 mW into a numerical aperture of 0.5 is obtained for a current of 30 mA into a 50 μ m diameter contact. Calibration of the growth rate along with accurate knowledge of the material properties of the semiconductor and metal mirrors is required for controlled and enhanced emission from planar UV LEDs.",

author = "B. Corbett and D. Zhu and B. Roycroft and P. Maaskant and M. Akhter and C. McAleese and Kappers, \{M. J.\} and Humphreys, \{C. J.\}",

year = "2008",

doi = "10.1002/pssc.200778405",

language = "English",

volume = "5",

pages = "2056--2058",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

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number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - High brightness near-ultraviolet resonant LEDs

AU - Corbett, B.

AU - Zhu, D.

AU - Roycroft, B.

AU - Maaskant, P.

AU - Akhter, M.

AU - McAleese, C.

AU - Kappers, M. J.

AU - Humphreys, C. J.

PY - 2008

Y1 - 2008

N2 - Planar near-ultraviolet 385 nm emitting resonant LEDs containing three quantum wells have been investigated as a function of the separation between the wells and a reflective and injecting metal mirror. The output power and far-field extracted through the substrate of the LEDs depend on the precise positions of the wells with each well having a significant individual influence on these properties. A doubling of the output power is obtained when the wells are located around the antinode position of the standing wave while narrower far-fields are obtained with other placement of the wells. A power of 0.4 mW into a numerical aperture of 0.5 is obtained for a current of 30 mA into a 50 μ m diameter contact. Calibration of the growth rate along with accurate knowledge of the material properties of the semiconductor and metal mirrors is required for controlled and enhanced emission from planar UV LEDs.

AB - Planar near-ultraviolet 385 nm emitting resonant LEDs containing three quantum wells have been investigated as a function of the separation between the wells and a reflective and injecting metal mirror. The output power and far-field extracted through the substrate of the LEDs depend on the precise positions of the wells with each well having a significant individual influence on these properties. A doubling of the output power is obtained when the wells are located around the antinode position of the standing wave while narrower far-fields are obtained with other placement of the wells. A power of 0.4 mW into a numerical aperture of 0.5 is obtained for a current of 30 mA into a 50 μ m diameter contact. Calibration of the growth rate along with accurate knowledge of the material properties of the semiconductor and metal mirrors is required for controlled and enhanced emission from planar UV LEDs.

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U2 - 10.1002/pssc.200778405

DO - 10.1002/pssc.200778405

M3 - Article

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SN - 1862-6351

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EP - 2058

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

High brightness near-ultraviolet resonant LEDs

Abstract

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