Abstract
This paper details the design, fabrication, and characterization of silicon-integrated microtransformers for isolated bias supplies. Racetrack-shaped microtransformers were designed and fabricated using the advanced double-layer metal (DLM) microfabrication process. The DLM devices have high inductance density of more than 80 nH/mm2 with an efficiency of approximately 78.2% at 20 MHz at 0.5-W output. This is the highest efficiency and power density reported for an integrated transformer in the literature. The inductance drop is less than 20% with a bias current of 0.35 A with up to 6-kV dc breakdown voltage achieved.
| Original language | English |
|---|---|
| Article number | A18 |
| Pages (from-to) | 5746-5754 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 30 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1 Oct 2015 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
Keywords
- integrated circuits
- isolation technology
- magnetic cores
- Magnetic devices
- power conversion
- power transformers
- switched-mode power supply
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