High-frequency micro-machined power inductors

N. Wang; T. O'Donnell; S. Roy; M. Brunet; P. McCloskey; S. C. O'Mathuna

doi:10.1016/j.jmmm.2004.11.434

High-frequency micro-machined power inductors

N. Wang
, T. O'Donnell
, S. Roy
, M. Brunet
, P. McCloskey
, S. C. O'Mathuna

Research output: Contribution to journal › Article › peer-review

Abstract

Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters.

Original language	English
Pages (from-to)	1347-1350
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.434
Publication status	Published - Apr 2005

Keywords

High frequency
Micro-machined
Power inductor

Access to Document

10.1016/j.jmmm.2004.11.434

Cite this

@article{7ae10b72d0314a31941fca6bff7ade92,

title = "High-frequency micro-machined power inductors",

abstract = "Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters.",

keywords = "High frequency, Micro-machined, Power inductor",

author = "N. Wang and T. O'Donnell and S. Roy and M. Brunet and P. McCloskey and O'Mathuna, \{S. C.\}",

year = "2005",

month = apr,

doi = "10.1016/j.jmmm.2004.11.434",

language = "English",

volume = "290-291 PART 2",

pages = "1347--1350",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - High-frequency micro-machined power inductors

AU - Wang, N.

AU - O'Donnell, T.

AU - Roy, S.

AU - Brunet, M.

AU - McCloskey, P.

AU - O'Mathuna, S. C.

PY - 2005/4

Y1 - 2005/4

N2 - Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters.

AB - Power inductors have been fabricated on silicon substrates using low-temperature IC compatible processes. The electrical properties of these micro-inductors have been measured and discussed. A maximum quality factor of 6 at 4 MHz has been achieved with an inductance value of about 160 nH. The DC saturation currents of the non-gapped and gapped inductors are ∼500 and 700 mA, respectively. The relatively high Q factor and the load current characteristics allow these micro-machined inductors to be used in integrated power converters.

KW - High frequency

KW - Micro-machined

KW - Power inductor

UR - https://www.scopus.com/pages/publications/14944375854

U2 - 10.1016/j.jmmm.2004.11.434

DO - 10.1016/j.jmmm.2004.11.434

M3 - Article

AN - SCOPUS:14944375854

SN - 0304-8853

VL - 290-291 PART 2

SP - 1347

EP - 1350

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

High-frequency micro-machined power inductors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this