Abstract
The features and benefits of thin films bulk acoustic resonators (FBAR) are discussed. The FBAR are best suited for future mobile communication system as they are compact, have low-loss and are largely compatible with the existing high frequency Si/GaAs IC processing. A FBAR is a resonant piezoelectric device similar to the quartz resonators, which consists of piezoelectric layer sandwich between two electrodes. Larger 3 dB bandwidths can be obtained from PZT FBAR filters due to the larger electromechanical coupling coefficient for PZT.
| Original language | English |
|---|---|
| Pages (from-to) | 5-7 |
| Number of pages | 3 |
| Journal | IEE Colloquium (Digest) |
| Issue number | 117 |
| Publication status | Published - 28 Nov 2000 |
| Externally published | Yes |