High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

R. Ginige; K. Cherkaoui; V. Wong Kwan; C. Kelleher; B. Corbett

doi:10.1063/1.1644905

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

R. Ginige
, K. Cherkaoui
, V. Wong Kwan
, C. Kelleher
, B. Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The current-voltage (I-V) characteristic of lattice matched In _0.53Ga_0.47As diodes as a function of temperature were investigated. It was observed at high temperatures the characteristic I-V curve corresponded to leakage, recombination, and the diffusion current. It was also observed that InGaAsP quaternary layer inserted between the InP window and the InGaAs emitter where it aid the injected electron to flow into the cap layer and thus to the external circuit which reduced the accumulation at the window/emitter interface. Results show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.

Original language	English
Pages (from-to)	2809-2815
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.1644905
Publication status	Published - 1 Mar 2004

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10.1063/1.1644905

https://hdl.handle.net/10468/4235Licence: CC BY-NC-ND

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title = "High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications",

abstract = "The current-voltage (I-V) characteristic of lattice matched In 0.53Ga0.47As diodes as a function of temperature were investigated. It was observed at high temperatures the characteristic I-V curve corresponded to leakage, recombination, and the diffusion current. It was also observed that InGaAsP quaternary layer inserted between the InP window and the InGaAs emitter where it aid the injected electron to flow into the cap layer and thus to the external circuit which reduced the accumulation at the window/emitter interface. Results show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.",

author = "R. Ginige and K. Cherkaoui and Kwan, \{V. Wong\} and C. Kelleher and B. Corbett",

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T1 - High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

AU - Ginige, R.

AU - Cherkaoui, K.

AU - Kwan, V. Wong

AU - Kelleher, C.

AU - Corbett, B.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - The current-voltage (I-V) characteristic of lattice matched In 0.53Ga0.47As diodes as a function of temperature were investigated. It was observed at high temperatures the characteristic I-V curve corresponded to leakage, recombination, and the diffusion current. It was also observed that InGaAsP quaternary layer inserted between the InP window and the InGaAs emitter where it aid the injected electron to flow into the cap layer and thus to the external circuit which reduced the accumulation at the window/emitter interface. Results show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.

AB - The current-voltage (I-V) characteristic of lattice matched In 0.53Ga0.47As diodes as a function of temperature were investigated. It was observed at high temperatures the characteristic I-V curve corresponded to leakage, recombination, and the diffusion current. It was also observed that InGaAsP quaternary layer inserted between the InP window and the InGaAs emitter where it aid the injected electron to flow into the cap layer and thus to the external circuit which reduced the accumulation at the window/emitter interface. Results show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.

UR - https://www.scopus.com/pages/publications/1642307924

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DO - 10.1063/1.1644905

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SN - 0021-8979

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EP - 2815

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

Abstract

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