High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- B. Raeissi
- , J. Piscator
- , O. Engström
- , S. Hall
- , O. Buiu
- , M. C. Lemme
- , H. D.B. Gottlob
- , P. K. Hurley
- , K. Cherkaoui
- , H. J. Osten
- Chalmers University of Technology
- University of Liverpool
- AMO GmbH
- Leibniz University Hannover
Research output: Contribution to journal › Article › peer-review