@inproceedings{a3e1e75e056f4360a6c224acd6b70810,
title = "High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy",
abstract = "Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by MBE and ALD, and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.",
author = "B. Raeissi and J. Piscator and O. Engstr{\"o}m and S. Hall and O. Buiu and Lemme, \{M. C.\} and Gottlob, \{H. D.B.\} and Hurley, \{P. K.\} and K. Cherkaoui and Osten, \{H. J.\}",
year = "2007",
doi = "10.1109/ESSDERC.2007.4430933",
language = "English",
isbn = "1424411238",
series = "ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "283--286",
booktitle = "ESSDERC07 - 2007 37th European Solid State Device Research Conference",
address = "United States",
note = "ESSDERC 2007 - 37th European Solid-State Device Research Conference ; Conference date: 11-09-2007 Through 13-09-2007",
}