High-performance MIM capacitors using novel PMNT Thin films

Wenbin Chen; Kevin G. McCarthy; Alan Mathewson; Mehmet Çopuroǧlu; Shane O'Brien; Richard Winfield

doi:10.1109/LED.2010.2052585

High-performance MIM capacitors using novel PMNT Thin films

Wenbin Chen
, Kevin G. McCarthy
, Alan Mathewson
, Mehmet Çopuroǧlu
, Shane O'Brien
, Richard Winfield

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

High-performance metalinsulatormetal (MIM) capacitors using novel Pb(Mg_0.33Nb_0.67)_0.65Ti_0.35O ₃ (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm²) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2×10^-10A/cm² and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.

Original language	English
Article number	5523882
Pages (from-to)	996-998
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2052585
Publication status	Published - Sep 2010

Keywords

Capacitance density
dielectric constant
high-κ
metalinsulatormetal (MIM) capacitor
Pb(MgNb) TiO (PMNT)
thin-film devices

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10.1109/LED.2010.2052585

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title = "High-performance MIM capacitors using novel PMNT Thin films",

abstract = "High-performance metalinsulatormetal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)0.65Ti0.35O 3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm2) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2×10-10A/cm2 and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.",

keywords = "Capacitance density, dielectric constant, high-κ, metalinsulatormetal (MIM) capacitor, Pb(MgNb) TiO (PMNT), thin-film devices",

author = "Wenbin Chen and McCarthy, \{Kevin G.\} and Alan Mathewson and Mehmet {\c C}opuroǧlu and Shane O'Brien and Richard Winfield",

year = "2010",

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doi = "10.1109/LED.2010.2052585",

language = "English",

volume = "31",

pages = "996--998",

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T1 - High-performance MIM capacitors using novel PMNT Thin films

AU - Chen, Wenbin

AU - McCarthy, Kevin G.

AU - Mathewson, Alan

AU - Çopuroǧlu, Mehmet

AU - O'Brien, Shane

AU - Winfield, Richard

PY - 2010/9

Y1 - 2010/9

N2 - High-performance metalinsulatormetal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)0.65Ti0.35O 3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm2) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2×10-10A/cm2 and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.

AB - High-performance metalinsulatormetal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)0.65Ti0.35O 3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm2) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2×10-10A/cm2 and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.

KW - Capacitance density

KW - dielectric constant

KW - high-κ

KW - metalinsulatormetal (MIM) capacitor

KW - Pb(MgNb) TiO (PMNT)

KW - thin-film devices

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DO - 10.1109/LED.2010.2052585

M3 - Article

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SP - 996

EP - 998

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

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ER -

High-performance MIM capacitors using novel PMNT Thin films

Abstract

Keywords

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