@inproceedings{27136257d8e24d39a50bf195999b2ab1,
title = "High power horizontal cavity surface-emitting InGaN superluminescent diode",
abstract = "In this work, a high power horizontal cavity surfaceemitting InGaN superluminescent diode is demonstrated. The amplified spontaneous emission is accomplished by angling the facets at 45° producing total internal reflection and surface emission on the substrate side. This novel structure allows total optical peak power above 2 W during pulsed mode operation. This optical peak power is the highest reported for a superluminescent diode based on GaN. Also, the electroluminescence spectrum for current above the superluminescent threshold shows a smooth emission with a full width at half maximum of 6 nm centered in 416 nm.",
keywords = "GaN, Superluminescent diodes, surface-emitting devices",
author = "Morales, \{J. S.D.\} and R. Cahill and B. Corbett",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE High Power Diode Lasers and Systems Conference, HPD 2019 ; Conference date: 09-10-2019 Through 10-10-2019",
year = "2019",
month = oct,
doi = "10.1109/HPD48113.2019.8938606",
language = "English",
series = "Proceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference, HPD 2019 - Co-located with Photonex 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "49--50",
booktitle = "Proceedings of the 2019 IEEE High Power Diode Lasers and Systems Conference, HPD 2019 - Co-located with Photonex 2019",
address = "United States",
}