High-Power Temperature-Insensitive Gain-Offset InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers

D. B. Young; J. W. Scott; F. H. Peters; B. J. Thibeault; S. W. Corzine; M. G. Peters; S. L. Lee; L. A. Coldren

doi:10.1109/68.195980

High-Power Temperature-Insensitive Gain-Offset InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers

D. B. Young
, J. W. Scott
, F. H. Peters
, B. J. Thibeault
, S. W. Corzine
, M. G. Peters
, S. L. Lee
, L. A. Coldren

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

Abstract

We have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. We fabricated lasers of 8-15 and 20 μm, diameters. The 8 μm, diameter devices exhibited CW operation up to 140°C with little.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/68.195980
Publication status	Published - Feb 1993
Externally published	Yes

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title = "High-Power Temperature-Insensitive Gain-Offset InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers",

abstract = "We have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. We fabricated lasers of 8-15 and 20 μm, diameters. The 8 μm, diameter devices exhibited CW operation up to 140°C with little.",

author = "Young, \{D. B.\} and Scott, \{J. W.\} and Peters, \{F. H.\} and Thibeault, \{B. J.\} and Corzine, \{S. W.\} and Peters, \{M. G.\} and Lee, \{S. L.\} and Coldren, \{L. A.\}",

year = "1993",

month = feb,

doi = "10.1109/68.195980",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High-Power Temperature-Insensitive Gain-Offset InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers

AU - Young, D. B.

AU - Scott, J. W.

AU - Peters, F. H.

AU - Thibeault, B. J.

AU - Corzine, S. W.

AU - Peters, M. G.

AU - Lee, S. L.

AU - Coldren, L. A.

PY - 1993/2

Y1 - 1993/2

N2 - We have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. We fabricated lasers of 8-15 and 20 μm, diameters. The 8 μm, diameter devices exhibited CW operation up to 140°C with little.

AB - We have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. We fabricated lasers of 8-15 and 20 μm, diameters. The 8 μm, diameter devices exhibited CW operation up to 140°C with little.

UR - https://www.scopus.com/pages/publications/0027539670

U2 - 10.1109/68.195980

DO - 10.1109/68.195980

M3 - Article

AN - SCOPUS:0027539670

SN - 1041-1135

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EP - 132

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

High-Power Temperature-Insensitive Gain-Offset InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers

Abstract

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