Abstract
Vertical cavity surface emitting lasers have been produced which emit greater than 100 mW CW output power. The devices have been optimised for operation at high temperatures, and are heatsunk to improve operation at large bias currents.
| Original language | English |
|---|---|
| Pages (from-to) | 200-201 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 1993 |
| Externally published | Yes |
Keywords
- Lasers
- Semiconductor lasers