High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

E. Pelucchi; M. Baier; Y. Ducommun; S. Watanabe; E. Kapon

doi:10.1002/pssb.200303006

High-quality In_xGa_1-xAs/Al_0.30Ga_0.70As quantum dots grown in inverted pyramids

E. Pelucchi
, M. Baier
, Y. Ducommun
, S. Watanabe
, E. Kapon

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

Abstract

We report here on the fabrication by organometallic chemical vapour deposition of In_xGa_1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al_0.30Ga_0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Physica Status Solidi (B): Basic Research
Volume	238
Issue number	2
DOIs	https://doi.org/10.1002/pssb.200303006
Publication status	Published - Jul 2003
Externally published	Yes

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10.1002/pssb.200303006

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title = "High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids",

abstract = "We report here on the fabrication by organometallic chemical vapour deposition of InxGa1-xAs quantum dots (QDs) with x up to 35\% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.",

author = "E. Pelucchi and M. Baier and Y. Ducommun and S. Watanabe and E. Kapon",

year = "2003",

month = jul,

doi = "10.1002/pssb.200303006",

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T1 - High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

AU - Pelucchi, E.

AU - Baier, M.

AU - Ducommun, Y.

AU - Watanabe, S.

AU - Kapon, E.

PY - 2003/7

Y1 - 2003/7

N2 - We report here on the fabrication by organometallic chemical vapour deposition of InxGa1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

AB - We report here on the fabrication by organometallic chemical vapour deposition of InxGa1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

UR - https://www.scopus.com/pages/publications/0042414043

U2 - 10.1002/pssb.200303006

DO - 10.1002/pssb.200303006

M3 - Article

AN - SCOPUS:0042414043

SN - 0370-1972

VL - 238

SP - 233

EP - 236

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 2

ER -

High-quality In_xGa_1-xAs/Al_0.30Ga_0.70As quantum dots grown in inverted pyramids

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