High-reflectivity AlxGa1-xN/AlyGa 1-yN distributed Bragg reflectors with peak wavelength around 350 nm

T. Wang; R. J. Lynch; P. J. Parbrook; R. Butté; A. Alyamani; D. Sanvitto; D. M. Whittaker; M. S. Skolnick

doi:10.1063/1.1766404

High-reflectivity Al_xGa_1-xN/Al_yGa _1-yN distributed Bragg reflectors with peak wavelength around 350 nm

T. Wang
, R. J. Lynch
, P. J. Parbrook
, R. Butté
, A. Alyamani
, D. Sanvitto
, D. M. Whittaker
, M. S. Skolnick

University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

Al_0.49Ga_0.51N/Al_0.16Ga_0.84N distributed Bragg reflectors (DBR) grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was analyzed. High-quality Al _0.49Ga_0.51N/Al_0.16Ga_0.84N DBRs with peak reflectivity of 91% and a bandwidth of 17 nm at 353 nm were grown. When the peak wavelength was shifted to 347 nm by modifying the layer thickness, the peak reflectivity was found to decrease and the stop band became asymmetric. This distortion of the reflectivity spectrum was identified as being due to internal absorption from the Al_0.16Ga_0.84N layers in the DBR.

Original language	English
Pages (from-to)	43-45
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	1
DOIs	https://doi.org/10.1063/1.1766404
Publication status	Published - 5 Jul 2004
Externally published	Yes

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title = "High-reflectivity AlxGa1-xN/AlyGa 1-yN distributed Bragg reflectors with peak wavelength around 350 nm",

abstract = "Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBR) grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was analyzed. High-quality Al 0.49Ga0.51N/Al0.16Ga0.84N DBRs with peak reflectivity of 91\% and a bandwidth of 17 nm at 353 nm were grown. When the peak wavelength was shifted to 347 nm by modifying the layer thickness, the peak reflectivity was found to decrease and the stop band became asymmetric. This distortion of the reflectivity spectrum was identified as being due to internal absorption from the Al0.16Ga0.84N layers in the DBR.",

author = "T. Wang and Lynch, \{R. J.\} and Parbrook, \{P. J.\} and R. Butt{\'e} and A. Alyamani and D. Sanvitto and Whittaker, \{D. M.\} and Skolnick, \{M. S.\}",

year = "2004",

month = jul,

day = "5",

doi = "10.1063/1.1766404",

language = "English",

volume = "85",

pages = "43--45",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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}

TY - JOUR

T1 - High-reflectivity AlxGa1-xN/AlyGa 1-yN distributed Bragg reflectors with peak wavelength around 350 nm

AU - Wang, T.

AU - Lynch, R. J.

AU - Parbrook, P. J.

AU - Butté, R.

AU - Alyamani, A.

AU - Sanvitto, D.

AU - Whittaker, D. M.

AU - Skolnick, M. S.

PY - 2004/7/5

Y1 - 2004/7/5

N2 - Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBR) grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was analyzed. High-quality Al 0.49Ga0.51N/Al0.16Ga0.84N DBRs with peak reflectivity of 91% and a bandwidth of 17 nm at 353 nm were grown. When the peak wavelength was shifted to 347 nm by modifying the layer thickness, the peak reflectivity was found to decrease and the stop band became asymmetric. This distortion of the reflectivity spectrum was identified as being due to internal absorption from the Al0.16Ga0.84N layers in the DBR.

AB - Al0.49Ga0.51N/Al0.16Ga0.84N distributed Bragg reflectors (DBR) grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was analyzed. High-quality Al 0.49Ga0.51N/Al0.16Ga0.84N DBRs with peak reflectivity of 91% and a bandwidth of 17 nm at 353 nm were grown. When the peak wavelength was shifted to 347 nm by modifying the layer thickness, the peak reflectivity was found to decrease and the stop band became asymmetric. This distortion of the reflectivity spectrum was identified as being due to internal absorption from the Al0.16Ga0.84N layers in the DBR.

UR - https://www.scopus.com/pages/publications/3242658354

U2 - 10.1063/1.1766404

DO - 10.1063/1.1766404

M3 - Article

AN - SCOPUS:3242658354

SN - 0003-6951

VL - 85

SP - 43

EP - 45

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

High-reflectivity Al_xGa_1-xN/Al_yGa _1-yN distributed Bragg reflectors with peak wavelength around 350 nm

Abstract

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