High speed AlInGaAs/InGaAs quantum well waveguide photodiode for wavelengths around 2 microns

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

A high speed waveguide photodiode fabricated with AlInGaAs/InGaAs multiple quantum wells for 2 micron wavelength detection is reported. The fabricated photodiode shows a photoresponsivity of 0.3 A/W at around 2μm wavelength and a 3 dB bandwidth around 7 GHz.

Original languageEnglish
Title of host publication2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Pages221-224
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States
Duration: 27 Aug 201230 Aug 2012

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
Country/TerritoryUnited States
CitySanta Barbara, CA
Period27/08/1230/08/12

Keywords

  • 2ém wavelength
  • AlInGaAs/InGaAs
  • high speed
  • optical communication
  • Photodiode
  • quantum well

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