High-speed and high-power InGaAs/InP photodiode

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

The photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40μM×5μM waveguide shows a 3dB bandwidth up to 10mA without saturation in our measurment range.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Publication statusPublished - 2011
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: 22 May 201126 May 2011

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/TerritoryGermany
CityBerlin
Period22/05/1126/05/11

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