High-speed Electro-absorption Modulator Assisted by Iron Doping for Micro-Transfer-Printing Integration

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

A high-speed lumped-element electro-absorption modulator designed for micro-transfer-printing onto silicon has been tested. The modulators use an iron doped layer to reduce the parasitic capacitance of the devices after transfer-printing, which is beneficial for achieving high bandwidth for heterogeneous integration applications with silicon photonics.

Original languageEnglish
Title of host publication2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 - Proceedings
PublisherIEEE Computer Society
ISBN (Electronic)9798350394047
DOIs
Publication statusPublished - 2024
Event2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 - Tokyo, Japan
Duration: 15 Apr 202418 Apr 2024

Publication series

NameIEEE International Conference on Group IV Photonics GFP
ISSN (Print)1949-2081

Conference

Conference2024 IEEE Silicon Photonics Conference, SiPhotonics 2024
Country/TerritoryJapan
CityTokyo
Period15/04/2418/04/24

Keywords

  • heterogeneous integration
  • high-speed photonics
  • micro transfer printing
  • Modulator

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