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High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance

  • Pleun P. Maaskant
  • , Haymen Shams
  • , Mahbub Akhter
  • , William Henry
  • , Menno J. Kappers
  • , Dandan Zhu
  • , Colin J. Humphreys
  • , Brian Corbett
  • InfiniLED
  • University of Cambridge

Research output: Contribution to journalArticlepeer-review

Abstract

InGaN-based micro-light-emitting diodes (μ-LEDs) emitting at 470 nm and composed of micropixels each with controlled shaping achieves directed light output with an angular full width at half maximum of 48°. The reflected light from the mesa sidewalls is azimuthally polarized. The small signal bandwidth of an individual μ-LED is >500 MHz. A cluster of 14 μ-LEDs is used to achieve a large signal data transfer rate of 500 Mbps in a form which is compatible with communication over plastic optical fibre.

Original languageEnglish
Article number022102
JournalApplied Physics Express
Volume6
Issue number2
DOIs
Publication statusPublished - Feb 2013

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