Abstract
The highest temperature operation and highest room temperature continuous wave output power of any vertical cavity surface emitting lasers (VCSEL) at 1300 or 1550 nm were demonstrated. These results arise from a new device structure employing a monolithically integrated 850 nm optical pump. The structure makes use of two wafer-fused GaAs/AlGaAs mirrors. These structures allow dopants to be eliminated in the long-wavelength VCSEL and eliminates the large voltage drop associated with electrical pumping across a p-GaAs to p-InP interface.
| Original language | English |
|---|---|
| Pages (from-to) | 210-211 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA Duration: 1 Dec 1998 → 4 Dec 1998 |
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