High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

A. L. Gurskii; E. V. Lutsenko; V. N. Pavlovskii; V. Z. Zubialevich; A. G. Ryabtsev; G. I. Ryabtsev; G. P. Yablonskii; Y. Dikme; A. Szymakovski; H. Kalisch; R. H. Jansen; B. Schineller; M. Heuken

doi:10.1109/ISCSPC.2003.1354454

High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

A. L. Gurskii
, E. V. Lutsenko
, V. N. Pavlovskii
, V. Z. Zubialevich
, A. G. Ryabtsev
, G. I. Ryabtsev
, G. P. Yablonskii
, Y. Dikme
, A. Szymakovski
, H. Kalisch
, R. H. Jansen
, B. Schineller
, M. Heuken

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Laser action at optical excitation was obtained over the temperature range up to 360°C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm². The maximal values of quantum efficiency, pulse energy and power of lasers were η_max = 5%, E_max = 140 nJ, P_max = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.

Original language	English
Title of host publication	2003 30th International Symposium on Compound Semiconductors, ISCS 2003
Subtitle of host publication	Post-Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	197-203
Number of pages	7
ISBN (Electronic)	0780386140
DOIs	https://doi.org/10.1109/ISCSPC.2003.1354454
Publication status	Published - 2003
Externally published	Yes
Event	30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-August

Conference

Conference	30th International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

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10.1109/ISCSPC.2003.1354454

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Gurskii, A. L., Lutsenko, E. V., Pavlovskii, V. N., Zubialevich, V. Z., Ryabtsev, A. G., Ryabtsev, G. I., Yablonskii, G. P., Dikme, Y., Szymakovski, A., Kalisch, H., Jansen, R. H., Schineller, B., & Heuken, M. (2003). High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (pp. 197-203). Article 1354454 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354454

Gurskii, A. L. ; Lutsenko, E. V. ; Pavlovskii, V. N. et al. / High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates. 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 197-203 (IEEE International Symposium on Compound Semiconductors, Proceedings).

@inbook{51c24977e6c24a638ae7edd12a38f05c,

title = "High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates",

abstract = "Laser action at optical excitation was obtained over the temperature range up to 360°C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm2. The maximal values of quantum efficiency, pulse energy and power of lasers were ηmax = 5\%, Emax = 140 nJ, Pmax = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.",

author = "Gurskii, \{A. L.\} and Lutsenko, \{E. V.\} and Pavlovskii, \{V. N.\} and Zubialevich, \{V. Z.\} and Ryabtsev, \{A. G.\} and Ryabtsev, \{G. I.\} and Yablonskii, \{G. P.\} and Y. Dikme and A. Szymakovski and H. Kalisch and Jansen, \{R. H.\} and B. Schineller and M. Heuken",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 30th International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCSPC.2003.1354454",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "197--203",

booktitle = "2003 30th International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Gurskii, AL, Lutsenko, EV, Pavlovskii, VN, Zubialevich, VZ, Ryabtsev, AG, Ryabtsev, GI, Yablonskii, GP, Dikme, Y, Szymakovski, A, Kalisch, H, Jansen, RH, Schineller, B & Heuken, M 2003, High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates. in 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings., 1354454, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-August, Institute of Electrical and Electronics Engineers Inc., pp. 197-203, 30th International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCSPC.2003.1354454

High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates. / Gurskii, A. L.; Lutsenko, E. V.; Pavlovskii, V. N. et al.
2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 197-203 1354454 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

AU - Gurskii, A. L.

AU - Lutsenko, E. V.

AU - Pavlovskii, V. N.

AU - Zubialevich, V. Z.

AU - Ryabtsev, A. G.

AU - Ryabtsev, G. I.

AU - Yablonskii, G. P.

AU - Dikme, Y.

AU - Szymakovski, A.

AU - Kalisch, H.

AU - Jansen, R. H.

AU - Schineller, B.

AU - Heuken, M.

PY - 2003

Y1 - 2003

N2 - Laser action at optical excitation was obtained over the temperature range up to 360°C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm2. The maximal values of quantum efficiency, pulse energy and power of lasers were ηmax = 5%, Emax = 140 nJ, Pmax = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.

AB - Laser action at optical excitation was obtained over the temperature range up to 360°C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm2. The maximal values of quantum efficiency, pulse energy and power of lasers were ηmax = 5%, Emax = 140 nJ, Pmax = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.

UR - https://www.scopus.com/pages/publications/84979294937

U2 - 10.1109/ISCSPC.2003.1354454

DO - 10.1109/ISCSPC.2003.1354454

M3 - Chapter

AN - SCOPUS:84979294937

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 197

EP - 203

BT - 2003 30th International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Gurskii AL, Lutsenko EV, Pavlovskii VN, Zubialevich VZ, Ryabtsev AG, Ryabtsev GI et al. High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 197-203. 1354454. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCSPC.2003.1354454

High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates

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