High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

E. V. Lutsenko; V. N. Pavlovskii; V. Z. Zubialevich; A. L. Gurskii; A. G. Ryabtsev; G. I. Ryabtsev; G. P. Yablonskii; Y. Dikme; A. Szymakowski; H. Kalisch; R. H. Jansen; B. Schineller; M. Heuken

doi:10.1109/ISCS.2003.1239946

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

E. V. Lutsenko
, V. N. Pavlovskii
, V. Z. Zubialevich
, A. L. Gurskii
, A. G. Ryabtsev
, G. I. Ryabtsev
, G. P. Yablonskii
, Y. Dikme
, A. Szymakowski
, H. Kalisch
, R. H. Jansen
, B. Schineller
, M. Heuken

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this report InGaN/GaN multiple quantum well (MQW) heterostructures were grown in AIXTRON MOVPE reactors on (111)-oriented Si substrates. The temperature behaviour of the laser threshold is defined mainly by spontaneous emission characteristics of excitation level equal to the laser threshold such as spontaneous recombination efficiency, full width at half maximum and position of the spectrum. Rates of spontaneous and nonradiative recombination, the value of internal quantum efficiency were estimated.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	141-142
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239946
Publication status	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Conference

Conference	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Keywords

Epitaxial growth
Gallium nitride
Laser excitation
Optical pumping
Pump lasers
Quantum well devices
Quantum well lasers
Radiative recombination
Stimulated emission
Temperature

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10.1109/ISCS.2003.1239946

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Lutsenko, E. V., Pavlovskii, V. N., Zubialevich, V. Z., Gurskii, A. L., Ryabtsev, A. G., Ryabtsev, G. I., Yablonskii, G. P., Dikme, Y., Szymakowski, A., Kalisch, H., Jansen, R. H., Schineller, B., & Heuken, M. (2003). High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 141-142). Article 1239946 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239946

Lutsenko, E. V. ; Pavlovskii, V. N. ; Zubialevich, V. Z. et al. / High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates. 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 141-142 (IEEE International Symposium on Compound Semiconductors, Proceedings).

@inbook{7ef08736d54b4a5680404e8c8ecc7d72,

title = "High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates",

abstract = "In this report InGaN/GaN multiple quantum well (MQW) heterostructures were grown in AIXTRON MOVPE reactors on (111)-oriented Si substrates. The temperature behaviour of the laser threshold is defined mainly by spontaneous emission characteristics of excitation level equal to the laser threshold such as spontaneous recombination efficiency, full width at half maximum and position of the spectrum. Rates of spontaneous and nonradiative recombination, the value of internal quantum efficiency were estimated.",

keywords = "Epitaxial growth, Gallium nitride, Laser excitation, Optical pumping, Pump lasers, Quantum well devices, Quantum well lasers, Radiative recombination, Stimulated emission, Temperature",

author = "Lutsenko, \{E. V.\} and Pavlovskii, \{V. N.\} and Zubialevich, \{V. Z.\} and Gurskii, \{A. L.\} and Ryabtsev, \{A. G.\} and Ryabtsev, \{G. I.\} and Yablonskii, \{G. P.\} and Y. Dikme and A. Szymakowski and H. Kalisch and Jansen, \{R. H.\} and B. Schineller and M. Heuken",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239946",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "141--142",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Lutsenko, EV, Pavlovskii, VN, Zubialevich, VZ, Gurskii, AL, Ryabtsev, AG, Ryabtsev, GI, Yablonskii, GP, Dikme, Y, Szymakowski, A, Kalisch, H, Jansen, RH, Schineller, B & Heuken, M 2003, High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239946, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 141-142, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCS.2003.1239946

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates. / Lutsenko, E. V.; Pavlovskii, V. N.; Zubialevich, V. Z. et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 141-142 1239946 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

AU - Lutsenko, E. V.

AU - Pavlovskii, V. N.

AU - Zubialevich, V. Z.

AU - Gurskii, A. L.

AU - Ryabtsev, A. G.

AU - Ryabtsev, G. I.

AU - Yablonskii, G. P.

AU - Dikme, Y.

AU - Szymakowski, A.

AU - Kalisch, H.

AU - Jansen, R. H.

AU - Schineller, B.

AU - Heuken, M.

PY - 2003

Y1 - 2003

N2 - In this report InGaN/GaN multiple quantum well (MQW) heterostructures were grown in AIXTRON MOVPE reactors on (111)-oriented Si substrates. The temperature behaviour of the laser threshold is defined mainly by spontaneous emission characteristics of excitation level equal to the laser threshold such as spontaneous recombination efficiency, full width at half maximum and position of the spectrum. Rates of spontaneous and nonradiative recombination, the value of internal quantum efficiency were estimated.

AB - In this report InGaN/GaN multiple quantum well (MQW) heterostructures were grown in AIXTRON MOVPE reactors on (111)-oriented Si substrates. The temperature behaviour of the laser threshold is defined mainly by spontaneous emission characteristics of excitation level equal to the laser threshold such as spontaneous recombination efficiency, full width at half maximum and position of the spectrum. Rates of spontaneous and nonradiative recombination, the value of internal quantum efficiency were estimated.

KW - Epitaxial growth

KW - Gallium nitride

KW - Laser excitation

KW - Optical pumping

KW - Pump lasers

KW - Quantum well devices

KW - Quantum well lasers

KW - Radiative recombination

KW - Stimulated emission

KW - Temperature

UR - https://www.scopus.com/pages/publications/84943518369

U2 - 10.1109/ISCS.2003.1239946

DO - 10.1109/ISCS.2003.1239946

M3 - Chapter

AN - SCOPUS:84943518369

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 141

EP - 142

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Lutsenko EV, Pavlovskii VN, Zubialevich VZ, Gurskii AL, Ryabtsev AG, Ryabtsev GI et al. High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 141-142. 1239946. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239946

High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

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Keywords

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