High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors

M. G. Peters; F. H. Peters; D. B. Young; J. W. Scott; B. J. Thibeault; L. A. Coldren

doi:10.1049/el:19930115

High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors

M. G. Peters
, F. H. Peters
, D. B. Young
, J. W. Scott
, B. J. Thibeault
, L. A. Coldren

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

Abstract

A lower energy barrier p-type Al_0.67Ga_0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86V, and a record high power-conversion efficiency of 14.9% was achieved.

Original language	English
Pages (from-to)	170-172
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1049/el:19930115
Publication status	Published - Jan 1993
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

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10.1049/el:19930115

Cite this

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title = "High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors",

abstract = "A lower energy barrier p-type Al0.67Ga0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86V, and a record high power-conversion efficiency of 14.9\% was achieved.",

keywords = "Lasers, Semiconductor lasers",

author = "Peters, \{M. G.\} and Peters, \{F. H.\} and Young, \{D. B.\} and Scott, \{J. W.\} and Thibeault, \{B. J.\} and Coldren, \{L. A.\}",

year = "1993",

month = jan,

doi = "10.1049/el:19930115",

language = "English",

volume = "29",

pages = "170--172",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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AU - Peters, M. G.

AU - Peters, F. H.

AU - Young, D. B.

AU - Scott, J. W.

AU - Thibeault, B. J.

AU - Coldren, L. A.

PY - 1993/1

Y1 - 1993/1

N2 - A lower energy barrier p-type Al0.67Ga0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86V, and a record high power-conversion efficiency of 14.9% was achieved.

AB - A lower energy barrier p-type Al0.67Ga0.33As/GaAs DBR mirror has been incorporated into a previously reported vertical-cavity surface-emitting laser structure. CW measurements at room temperature demonstrate lower threshold voltages of 1.86V, and a record high power-conversion efficiency of 14.9% was achieved.

KW - Lasers

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0027282908

U2 - 10.1049/el:19930115

DO - 10.1049/el:19930115

M3 - Article

AN - SCOPUS:0027282908

SN - 0013-5194

VL - 29

SP - 170

EP - 172

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

High wallplug efficiency vertical-cavity surface-emitting lasers using lower barrier DBR mirrors

Abstract

Keywords

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