High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Grigorij Muliuk; Jing Zhang; Jeroen Goyvaerts; Sulakshna Kumari; Brian Corbett; Dries Van Thourhout; Günther Roelkens

doi:10.1117/12.2507373

High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

Grigorij Muliuk
, Jing Zhang
, Jeroen Goyvaerts
, Sulakshna Kumari
, Brian Corbett
, Dries Van Thourhout
, Günther Roelkens

Ghent University

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl₃, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.

Original language	English
Title of host publication	Silicon Photonics XIV
Editors	Graham T. Reed, Andrew P. Knights
Publisher	SPIE
ISBN (Electronic)	9781510624887
DOIs	https://doi.org/10.1117/12.2507373
Publication status	Published - 2019
Event	Silicon Photonics XIV 2019 - San Francisco, United States Duration: 4 Feb 2019 → 6 Feb 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10923
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Silicon Photonics XIV 2019
Country/Territory	United States
City	San Francisco
Period	4/02/19 → 6/02/19

Keywords

Heterogeneous integration
Photodiodes
Photonic integration
Silicon photonics
Transfer printing

Access to Document

10.1117/12.2507373

Cite this

Muliuk, G., Zhang, J., Goyvaerts, J., Kumari, S., Corbett, B., Van Thourhout, D., & Roelkens, G. (2019). High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In G. T. Reed, & A. P. Knights (Eds.), Silicon Photonics XIV Article 1092305 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10923). SPIE. https://doi.org/10.1117/12.2507373

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title = "High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits",

abstract = "Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.",

keywords = "Heterogeneous integration, Photodiodes, Photonic integration, Silicon photonics, Transfer printing",

author = "Grigorij Muliuk and Jing Zhang and Jeroen Goyvaerts and Sulakshna Kumari and Brian Corbett and \{Van Thourhout\}, Dries and G{\"u}nther Roelkens",

note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; Silicon Photonics XIV 2019 ; Conference date: 04-02-2019 Through 06-02-2019",

year = "2019",

doi = "10.1117/12.2507373",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Reed, \{Graham T.\} and Knights, \{Andrew P.\}",

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}

Muliuk, G, Zhang, J, Goyvaerts, J, Kumari, S, Corbett, B, Van Thourhout, D & Roelkens, G 2019, High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. in GT Reed & AP Knights (eds), Silicon Photonics XIV., 1092305, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10923, SPIE, Silicon Photonics XIV 2019, San Francisco, United States, 4/02/19. https://doi.org/10.1117/12.2507373

High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. / Muliuk, Grigorij; Zhang, Jing; Goyvaerts, Jeroen et al.
Silicon Photonics XIV. ed. / Graham T. Reed; Andrew P. Knights. SPIE, 2019. 1092305 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10923).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

AU - Muliuk, Grigorij

AU - Zhang, Jing

AU - Goyvaerts, Jeroen

AU - Kumari, Sulakshna

AU - Corbett, Brian

AU - Van Thourhout, Dries

AU - Roelkens, Günther

PY - 2019

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N2 - Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.

AB - Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.

KW - Heterogeneous integration

KW - Photodiodes

KW - Photonic integration

KW - Silicon photonics

KW - Transfer printing

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DO - 10.1117/12.2507373

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AN - SCOPUS:85065428562

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ER -

Muliuk G, Zhang J, Goyvaerts J, Kumari S, Corbett B, Van Thourhout D et al. High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In Reed GT, Knights AP, editors, Silicon Photonics XIV. SPIE. 2019. 1092305. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2507373

High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

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