Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors

T. Wang; P. J. Parbrook; C. N. Harrison; J. P. Ao; Y. Ohno

doi:10.1016/j.jcrysgro.2004.04.029

Highly improved performance of a 350 nm ultraviolet light-emitting diode containing Al_xGa_1-xN/Al_yGa_1-yN distributed Bragg reflectors

T. Wang
, P. J. Parbrook
, C. N. Harrison
, J. P. Ao
, Y. Ohno

Research output: Contribution to journal › Article › peer-review

Abstract

By introducing Al_0.49Ga_0.51N/Al_0.16Ga _0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362nm, the GaN bandgap.

Original language	English
Pages (from-to)	583-587
Number of pages	5
Journal	Journal of Crystal Growth
Volume	267
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.029
Publication status	Published - 1 Jul 2004
Externally published	Yes

Keywords

A1. Distributed Bragg reflectors
A1. Reflectivity
A1. Ultraviolet
B1. AlInGoN quaternary
B3. Light emitting diodes

Access to Document

10.1016/j.jcrysgro.2004.04.029

Cite this

@article{fae6ce54522d4f5e80f8095e117e9b09,

title = "Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors",

abstract = "By introducing Al0.49Ga0.51N/Al0.16Ga 0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362nm, the GaN bandgap.",

keywords = "A1. Distributed Bragg reflectors, A1. Reflectivity, A1. Ultraviolet, B1. AlInGoN quaternary, B3. Light emitting diodes",

author = "T. Wang and Parbrook, \{P. J.\} and Harrison, \{C. N.\} and Ao, \{J. P.\} and Y. Ohno",

year = "2004",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2004.04.029",

language = "English",

volume = "267",

pages = "583--587",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors

AU - Wang, T.

AU - Parbrook, P. J.

AU - Harrison, C. N.

AU - Ao, J. P.

AU - Ohno, Y.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - By introducing Al0.49Ga0.51N/Al0.16Ga 0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362nm, the GaN bandgap.

AB - By introducing Al0.49Ga0.51N/Al0.16Ga 0.84N distributed Bragg reflectors (DBRs), the performance of an ultraviolet (UV) light-emitting diode (LED) with an emission wavelength of about 350nm on a sapphire substrate was dramatically improved. The output power was enhanced by a factor of 2.3, compared to the conventional UV-LED with a similar emission wavelength. This enhancement due to the DBRs was larger than that occurring in InGaN-based blue LEDs also containing DBRs, in which the increase of optical power with a factor of 1.5 was reported compared to the InGaN-based blue LEDs without DBRs. This can be attributed to the introduction of DBRs into the UV-LED which can strongly suppress the so-called internal absorption issue, one of the key factors impeding the performance of UV-LEDs grown on sapphire substrates with emission wavelengths below 362nm, the GaN bandgap.

KW - A1. Distributed Bragg reflectors

KW - A1. Reflectivity

KW - A1. Ultraviolet

KW - B1. AlInGoN quaternary

KW - B3. Light emitting diodes

UR - https://www.scopus.com/pages/publications/2942548993

U2 - 10.1016/j.jcrysgro.2004.04.029

DO - 10.1016/j.jcrysgro.2004.04.029

M3 - Article

AN - SCOPUS:2942548993

SN - 0022-0248

VL - 267

SP - 583

EP - 587

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Highly improved performance of a 350 nm ultraviolet light-emitting diode containing Al_xGa_1-xN/Al_yGa_1-yN distributed Bragg reflectors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this