@inbook{aefcb0f27980438aafeba45e6c41227b,
title = "Highly reliable CW strained layer InGaAs/GaAs (λ.=980 nm) SCH SQW lasers fabricated by MBE",
abstract = "Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heleroslructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980 nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation. Threshold current densities of the order of.Jth,≈280 A/cm2 (for the resonator length L-700 μm) and differential efficiency η=0.4 W/A (41\%) were obtained. The wall-plug efficiency was 38\%. Theoretical estimations of above mentioned quantities obtained by numerical modelling of devices were Jth,=210 A/cm and η=0.47 W/A respectively.",
author = "P. Sajewicz and T. Piwo{\'n}ski and K. Regi{\'n}ski and B. Mroziewicz and M. Bugajski",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 ; Conference date: 16-10-2000 Through 18-10-2000",
year = "2000",
doi = "10.1109/ASDAM.2000.889533",
language = "English",
series = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "411--414",
editor = "Jan Kuzmik and Jozef Osvald and Stefan Hascik and Juraj Breza",
booktitle = "ASDAM 2000 - Conference Proceedings",
address = "United States",
}