Highly reliable CW strained layer InGaAs/GaAs (λ.=980 nm) SCH SQW lasers fabricated by MBE
- P. Sajewicz
- , T. Piwoński
- , K. Regiński
- , B. Mroziewicz
- , M. Bugajski
- Institute of Microelectronics and Photonics
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review