Ideal unreactive metal/semiconductor interfaces: The case of (formula presented)

S. Rubini; E. Pelucchi; M. Lazzarino; D. Kumar; A. Franciosi; C. Berthod; N. Binggeli; A. Baldereschi

doi:10.1103/PhysRevB.63.235307

Ideal unreactive metal/semiconductor interfaces: The case of (formula presented)

S. Rubini
, E. Pelucchi
, M. Lazzarino
, D. Kumar
, A. Franciosi
, C. Berthod
, N. Binggeli
, A. Baldereschi

Research output: Contribution to journal › Article › peer-review

Abstract

Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) (formula presented) (formula presented) and (formula presented) surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.63.235307
Publication status	Published - 2001
Externally published	Yes

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10.1103/PhysRevB.63.235307

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title = "Ideal unreactive metal/semiconductor interfaces: The case of (formula presented)",

abstract = "Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) (formula presented) (formula presented) and (formula presented) surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.",

author = "S. Rubini and E. Pelucchi and M. Lazzarino and D. Kumar and A. Franciosi and C. Berthod and N. Binggeli and A. Baldereschi",

year = "2001",

doi = "10.1103/PhysRevB.63.235307",

language = "English",

volume = "63",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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publisher = "American Physical Society",

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T1 - Ideal unreactive metal/semiconductor interfaces

T2 - The case of (formula presented)

AU - Rubini, S.

AU - Pelucchi, E.

AU - Lazzarino, M.

AU - Kumar, D.

AU - Franciosi, A.

AU - Berthod, C.

AU - Binggeli, N.

AU - Baldereschi, A.

PY - 2001

Y1 - 2001

N2 - Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) (formula presented) (formula presented) and (formula presented) surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

AB - Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) (formula presented) (formula presented) and (formula presented) surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

UR - https://www.scopus.com/pages/publications/85038320169

U2 - 10.1103/PhysRevB.63.235307

DO - 10.1103/PhysRevB.63.235307

M3 - Article

AN - SCOPUS:85038320169

SN - 1098-0121

VL - 63

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

ER -

Ideal unreactive metal/semiconductor interfaces: The case of (formula presented)

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