Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)

S. Rubini; E. Pelucchi; M. Lazzarino; D. Kumar; A. Franciosi; C. Berthod; N. Binggeli; A. Baldereschi

Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)

S. Rubini
, E. Pelucchi
, M. Lazzarino
, D. Kumar
, A. Franciosi
, C. Berthod
, N. Binggeli
, A. Baldereschi

Kurukshetra University

Research output: Contribution to journal › Article › peer-review

Abstract

Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2×2), 2 ×1, and 1×1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

Original language	English
Article number	235307
Pages (from-to)	2353071-2353078
Number of pages	8
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	23
Publication status	Published - 2001
Externally published	Yes

Cite this

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title = "Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)",

abstract = "Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2×2), 2 ×1, and 1×1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.",

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T1 - Ideal unreactive metal/semiconductor interfaces

T2 - The case of Zn/ZnSe(001)

AU - Rubini, S.

AU - Pelucchi, E.

AU - Lazzarino, M.

AU - Kumar, D.

AU - Franciosi, A.

AU - Berthod, C.

AU - Binggeli, N.

AU - Baldereschi, A.

PY - 2001

Y1 - 2001

N2 - Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2×2), 2 ×1, and 1×1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

AB - Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2×2), 2 ×1, and 1×1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.

UR - https://www.scopus.com/pages/publications/0034904498

M3 - Article

AN - SCOPUS:0034904498

SN - 0163-1829

VL - 63

SP - 2353071

EP - 2353078

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 235307

ER -

Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001)

Abstract

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