III-V Electro-Absorption Modulation and Detection Devices Integrated to 220 nm Silicon-on-Insulator

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Springer Proceedings in Physics
DOIs	https://doi.org/10.1007/978-3-031-63378-2_10
Publication status	Published - 2024

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title = "III-V Electro-Absorption Modulation and Detection Devices Integrated to 220 nm Silicon-on-Insulator",

author = "Owen Moynihan and Samir Ghosh and James O'Callaghan and Brendan Roycroft and Kevin Thomas and Emanuele Pelucchi and Brian Corbett",

year = "2024",

doi = "10.1007/978-3-031-63378-2\_10",

language = "Undefined/Unknown",

journal = "Springer Proceedings in Physics",

issn = "0930-8989",

publisher = "Springer Science and Business Media Deutschland GmbH",

}

TY - JOUR

T1 - III-V Electro-Absorption Modulation and Detection Devices Integrated to 220 nm Silicon-on-Insulator

AU - Moynihan, Owen

AU - Ghosh, Samir

AU - O'Callaghan, James

AU - Roycroft, Brendan

AU - Thomas, Kevin

AU - Pelucchi, Emanuele

AU - Corbett, Brian

PY - 2024

Y1 - 2024

UR - https://publons.com/wos-op/publon/72208540/

U2 - 10.1007/978-3-031-63378-2_10

DO - 10.1007/978-3-031-63378-2_10

M3 - Article

SN - 0930-8989

JO - Springer Proceedings in Physics

JF - Springer Proceedings in Physics

ER -