III-V Electro-Absorption Modulation and Detection Devices Integrated to 220 nm Silicon-on-Insulator

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Abstract

III-V indium phosphide (InP) ridge coupons capable of electro-absorption modulation and detection are integrated on a 220 nm silicon-on-insulator platform using transfer printing. The coupons employ a PIN structure design that can be actively biased to efficiently modulate and detect light with a bandwidth of >30 nm from 1550–1580 nm. Across the C-band, the grating coupled devices provide an extinction ratio (ER) of 25 dB and detect light with a responsivity of over 0.85 A/W, with an insertion loss (IL) at 0 V of 3.5 dB at 1580 nm and 6.5 dB at 1550 nm.

Original languageEnglish
Title of host publicationThe 25th European Conference on Integrated Optics - Proceedings of ECIO 2024
EditorsJeremy Witzens, Joyce Poon, Lars Zimmermann, Wolfgang Freude
PublisherSpringer Science and Business Media Deutschland GmbH
Pages53-57
Number of pages5
ISBN (Print)9783031633775
DOIs
Publication statusPublished - 2024
Event25th European Conference on Integrated Optics, ECIO 2024 - Aachen, Germany
Duration: 17 Jun 202419 Jun 2024

Publication series

NameSpringer Proceedings in Physics
Volume402
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Conference

Conference25th European Conference on Integrated Optics, ECIO 2024
Country/TerritoryGermany
CityAachen
Period17/06/2419/06/24

Keywords

  • electro-optic modulation
  • Heterogeneous integration
  • micro-transfer printing
  • photo detection
  • Quantum-confined-Stark-effect (QCSE)

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