@inproceedings{9d610eff6c5540d8aba658f233aa50fb,
title = "III-V MOSFETs for sub-15 nm technology generation CMOS: Some observations, issues and solutions",
abstract = "The high electron mobility of compound semiconductor materials can result in high velocity and low backscatter electrons being injected at the source side of a III-V nMOSFET. In combination, these factors have the potential to meet the highly challenging performance metrics of the International Technology Roadmap for Semiconductors (ITRS) [1] beyond the 15 nm technology generation, in particular the need to reduce supply voltages towards 0.5 V. This paper highlights a number of the significant challenges which have to be addressed if III-V MOSFETs are to be a credible solution to enable continued scaling of the ITRS beyond 2018.",
keywords = "III-V MOSFETs, Si compatible process modules",
author = "Iain Thayne and Xu Li and Wout Jansen and Ian Povey and Eamon O'Connor and Martin Pemble and Paul Hurley and Jaesoo Ahn and Paul McIntyre",
year = "2012",
language = "English",
isbn = "1893580199",
series = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
booktitle = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
note = "27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 ; Conference date: 23-04-2012 Through 26-04-2012",
}