III-V-on-Si DFB Laser With Co-Integrated Power Amplifier Realized Using Micro-Transfer Printing

  • Jing Zhang
  • , Laurens Bogaert
  • , Bahawal Haq
  • , Ruohui Wang
  • , Bozena Matuskova
  • , Johanna Rimbock
  • , Stefan Ertl
  • , Agnieszka Gocalinska
  • , Emanuele Pelucchi
  • , Brian Corbett
  • , Joris Van Campenhout
  • , Guy Lepage
  • , Peter Verheyen
  • , Geert Morthier
  • , Gunther Roelkens

Research output: Contribution to journalArticlepeer-review

Abstract

A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20 °C. By driving the DFB laser and co-integrated power amplifier simultaneously, up to 14 dBm waveguide-coupled output power with over 28 dB side mode suppression ratio was achieved at an overall bias current of 270 mA.

Original languageEnglish
Pages (from-to)593-596
Number of pages4
JournalIEEE Photonics Technology Letters
Volume35
Issue number11
DOIs
Publication statusPublished - 1 Jun 2023

Keywords

  • DFB laser
  • III-V-on-Si integration
  • integrated power amplifier
  • micro-transfer printing

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